90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET

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TRIQUINT

射频金属氧化物半导体场效应(RF MOSFET)晶体管 2.11-2.17GHz 19Watt Gain 14.5dB

ASI Semiconductor

INTEGRATED CIRCUITS

[SANYO] INTEGRATED CIRCUITS Gate Arrays (monolithic ICs)

文件：145.99 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW

文件：391.9 Kbytes 页数：8 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. • Typical W–CDMA Performance for 214

文件：556.53 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉