型号：SMBJ220A；Package：SMB；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMB Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits • Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W • Reverse standoff

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安世安世半导体(中国)有限公司

型号：AG20；ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The AG Series is a new line of ultra-miniature DC to HV DC converters that set an industry standard in high voltage miniaturization. These component-sized converters are ideal for applications requiring minimal size and weight. Occupying less than one tenth of a cubic inch of

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XPPOWER

型号：AG20N-12T；ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

PRODUCT DESCRIPTION The AG Series is a new line of ultra-miniature DC to HV DC converters that set an industry standard in high voltage miniaturization. These component-sized converters are ideal for applications requiring minimal size and weight. Occupying less than one tenth of a cubic inch of

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XPPOWER

型号：AG2101；MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

文件：585.73 Kbytes 页数：8 Pages

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型号：AG2101M8R；MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

文件：585.73 Kbytes 页数：8 Pages

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型号：AG2101M8VR；MOSFET/IGBT GATE DRIVER HIGH AND LOW SIDE DRIVER

DESCRIPTION The AG2101 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL outp

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型号：AG2104；MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 页数：9 Pages

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型号：AG2104M8R；MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 页数：9 Pages

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型号：AG2104M8VR；MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：557.85 Kbytes 页数：9 Pages

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型号：AG2106；MOSFET/IGBT GATE DRIVER HALF-BRIDGE DRIVER

DESCRIPTION The AG2106 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600V. Logic inputs are compatible with standard C

文件：997.35 Kbytes 页数：15 Pages

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