AFT21S232S

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ETC

AFT21S232S

2110-2170 MHz，50 W平均值，28 V Airfast® LDMOS射频功率晶体管; • Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n• NI-780S-2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.\n;

The AFT21S232SR3 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

恩XP

AFT21S232SR3

RF Power LDMOS Transistors

N--ChannelEnhancement--ModeLateralMOSFETs These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplicationscoveringthefrequencyrangeof2110to2170MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Vdc,IDQ=1500mA, Pout=50WAvg.,InputSignalPA

ETC

AFT21S232SR3

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs