RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

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RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

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RF Power LDMOS Transistors

文件：437.43 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：559.99 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

2110-2170 MHz，50 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT21S230SR3 50 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz. • Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• Designed for Digital Predistortion Error Correction Systems\n• Optimized for Doherty Applications\n• RoHS Compliant\n• NI-780S-2L4S: R3 Suffix = 250 Units, 44 mm Tape Width, 13 inch Reel.;

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