N--Channel Enhancement--Mode Lateral MOSFETs

These 50 W RF power LDMOS transistors are designed for cellular

base station applications covering the frequency range of 2110 to 2170 MHz.

 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA,

Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01 Probability on CCDF.

Features

 Greater Negative Gate--Source Voltage Range for Improved Class C Operation

 Designed for Digital Predistortion Error Correction Systems

 Optimized for Doherty Applications

 NI--780S--2L2L, NI--780S--2L4S: R3 Suffix = 250 Units, 44 mm Tape Width,

13--inch Reel.

 NI--780S--2L: R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.

For R5 Tape and Reel options, see p. 17.

AFT21S230S属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。恩智浦半导体公司制造生产的AFT21S230S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。