N-Channel Enhancement-Mode Lateral MOSFET

文件：526.34 Kbytes 页数：17 Pages

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N-Channel Enhancement-Mode Lateral MOSFET

文件：526.34 Kbytes 页数：17 Pages

恩XP

1805-1880 MHz，63 W平均值，28 V Airfast® LDMOS射频功率晶体管

The AFT18H357-24NR6 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. • Advanced high performance in-package Doherty\n• High thermal conductivity packaging technology for reduced thermal resistance\n• Greater negative gate-source voltage range for improved Class C operation\n• Designed for digital predistortion error correction systems\n• RoHS compliant;

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