RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 1500 mA, Pout = 50 W Avg., Input Signal PA

文件：543.07 Kbytes 页数：17 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

Features  Advanced High Performance In--Package Doherty  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems

文件：388.24 Kbytes 页数：16 Pages

恩XP

Anti Fatigue Mats – Textured Pattern

APPLICATIONS: Auto, Electronic, Industrial Warehouse, Customer Service Counters, Retail Checkout Counters, Hotel Counters, Retail Counters

文件：173.9 Kbytes 页数：1 Pages

BERTECH

Bertech.

Anti Fatigue Mats – Textured Pattern

APPLICATIONS: Automotive, Electronics Assembly, Industrial, Medical, and Pharmaceutical Companies

文件：190.99 Kbytes 页数：1 Pages

BERTECH

Bertech.

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：1.06063 Mbytes 页数：21 Pages

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：1.06063 Mbytes 页数：21 Pages

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：1.06063 Mbytes 页数：21 Pages

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

文件：1.22898 Mbytes 页数：20 Pages

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

文件：1.17221 Mbytes 页数：23 Pages

恩XP