High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：1.06063 Mbytes 页数：21 Pages

恩XP

High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

文件：1.06063 Mbytes 页数：21 Pages

恩XP

136-520 MHz，70 W，12.5 V LDMOS宽带射频功率晶体管

The AFT05MP075NR1 and AFT05MP075GNR1 are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. • Characterized for Operation from 136 to 520 MHz\n• Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Integrated ESD Protection\n• Integrated Stability Enhancements\n• Wideband — Full Power Across the Band\n• Exceptional Thermal Performance\n• Extreme Ruggedness\n• High Linear;

恩XP