RF Power LDMOS Transistors

文件：1.43744 Mbytes 页数：27 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：1.43744 Mbytes 页数：27 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

136-520 MHz，31 W，13.6 V LDMOS宽带射频功率晶体管

The AFT05MS031NR1 and AFT05MS031GNR1 are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in mobile radio equipment. • Characterized for Operation from 136 to 520 MHz\n• Unmatched Input and Output Allowing Wide Frequency Range Utilization\n• Integrated ESD Protection\n• Integrated Stability Enhancements\n• Wideband — Full Power Across the Band• 136-174 MHz\n• 380-450 MHz\n• 450-520 MHz\n• 225°C Capable Plastic Pac;

恩XP

恩XP

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