丝印：AFP；Package：SOD-123EP；Surface Mount Schottky Barrier Rectifiers 1 A, 20 V - 150 V

Features • Larger Cathode Pad for Improved Power Dissipation • Ultra Thin Profile − Package Height

文件：163.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step Down Converter

文件：748.49 Kbytes 页数：20 Pages

MPS

美国芯源

丝印：AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step-Down Converter AEC-Q100 Qualified

文件：749.58 Kbytes 页数：20 Pages

MPS

美国芯源

丝印：AFP；Package：TSOT23-8；High Efficiency 2A, 36V, Synchronous Step-Down Converter AEC-Q100 Qualified

文件：749.58 Kbytes 页数：20 Pages

MPS

美国芯源

General Purpose PHEMT Chip

Description The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Features

文件：23.88 Kbytes 页数：4 Pages

ALPHA

General Purpose Packaged PHEMT Chips

Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable

文件：30.33 Kbytes 页数：4 Pages

ALPHA

General Purpose Packaged PHEMT Chips

Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable

文件：30.33 Kbytes 页数：4 Pages

ALPHA

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：808.48 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual-In-Line Package Intelligent Power Module

Features  UL Recognized:  600V-6A (Trench Shielded Planar Gate IGBT)  Full bridge Inverter module including HVIC drivers  Built-in bootstrap diodes with integrated current-limiting resistor  Control supply under-voltage lockout protection (UVLO)  Over-temperature (OT) protection and te

文件：1.72517 Mbytes 页数：15 Pages

AOSMD

万国半导体

Dual-In-Line Package Intelligent Power Module

Features  UL Recognized:  600V-6A (Trench Shielded Planar Gate IGBT)  Full bridge Inverter module including HVIC drivers  Built-in bootstrap diodes with integrated current-limiting resistor  Control supply under-voltage lockout protection (UVLO)  Over-temperature (OT) protection and te

文件：1.72517 Mbytes 页数：15 Pages

AOSMD

万国半导体