IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：248.65 Kbytes 页数：10 Pages

ONSEMI

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IGBT - 650 V 40 A - Short circuit rated FS4  - Automotive qualified

Using novel field stop IGBT technology, ON Semiconductor’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. • AEC Q101 qualified\n• suitable for automotive application\n• Maximum Junction Temperature : TJ = 175℃\n• Higher Reliability\n• Positive Temperature Co-efficient\n• Easy parallel Operation\n• Low Saturation Voltage\n• Low conduction Losses\n• Tightened Parameter Distribution\n• Suitable for paralli;

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：336.02 Kbytes 页数：9 Pages

ONSEMI

安森美半导体