ISC0605NLS

OptiMOSTM5Power-Transistor,80V

Features •OptimizedforhighperformanceSMPS,e.g.synchronousrectification •100avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

KX0605/STN

GRUBSCREWFIXING

KX0605SLASHSTN

GRUBSCREWFIXING

LM0605H

Carbonylpowderinductor.

LST0605-FC-A

SingleModeConnectorizedLaserDiode(LowPower)

Description TheLST0605-FC-Aserieshasbeendevelopedforlowcost,coolerlesslowpowersinglemodeapplicationsusingtheFCstyleconnector.BoththeburiedheterostructurelaserandthemonitorphotodiodearemanufacturedusingtheHewlett-PackardMOVPEprocess. Features •1300nmSingleM

MSC0605W

60V(D-S)DualN-ChannelEnhancementModePowerMOSFET

MSS0605

VOICEROM

Description TheMSS0605isamonolithicCMOSVLSIASICthatcanmemorizevoiceupto6secondsusingMOSELqualifiedcodingmethod(MPCM).Itcanplay9phrasesinsteadof9simplesections.Mostofthenecessarycircuitarebuiltinlikeoscillator,ROM,DACandinterfacelogic.2LEDsandsepar

N0605N

N-channelMOSFET60V,80A,8.5mΩ

Features •Lowon-stateresistance:RDS(on)=8.5mΩmax.(VGS=10V,ID=40A) •LowCiss:Ciss=3300pFtyp.(VDS=25V) •Highcurrent:ID(DC)=±80A •RoHSCompliant •QualityGrade:Standard •Applications:Forhighcurrentswitching

NDS0605

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodefieldeffecttransistorsareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeendesignedtominimizeonstateresistance,provideruggedandreliableperformanceandfastswitching

NDS0605

P-ChannelEnhancementModeFieldEffectTransistor