P-Channel Enhancement Mode Power MOSFET

文件：278.4 Kbytes 页数：5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件：278.4 Kbytes 页数：5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件：278.4 Kbytes 页数：5 Pages

ANACHIP

易亨电子

P-Channel Enhancement Mode Power MOSFET

文件：278.4 Kbytes 页数：5 Pages

ANACHIP

易亨电子

0.12uH, 10%, 0.17 mOhm DCR, 94A SMD Power Bead

Ferrite based SMD inductor with lower core loss.High current output chokes of up to 165.0 Amp with approx. 20% roll off.Low profile 9.00 mm max. height.Foot Print 9.60 x 6.40 mm foot print.Ideal for Buck Converter, VRM & High Density Board Design.Operating frequency of up to 5.0 MHz.Operating te • Ferrite based SMD inductor with lower core loss.\n• Low profile 9.00 mm max. height.\n• Ideal for Buck Converter, VRM & High Density Board Design.\n• Operating temperature range of -55°C to +130°C.\n• T & R Qty’s: 500pcs, 13'' Reel.;

ITG

P-Channel Enhancement Mode Power MOSFET

Diodes

美台半导体

PNP GERMANIUM RF TRANSISTOR

Infineon

英飞凌