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BC850C

NPNgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860.

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC850C

SMDGeneralPurposeNPNTransistors

DiotecDIOTEC

德欧泰克

BC850C

NPNSiliconAFTransistors

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850C

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC850C

NPNGENERALPURPOSETRANSISTORS

FEATURES •Generalpurposeamplifierapplications •NPNepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BC850C

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplements:BC859andBC860. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC850C

NPNGeneralPurposeTransistors

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●PNPcomplements:BC859andBC860.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC850C

SurfacemountSi-EpitaxialPlanarTransistors

GeneralPurposeTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC850C

GeneralPurposeTransistors

GeneralPurposeTransistors NPNSilicon

ETLE-Tech Electronics LTD

亞歷電子亞歷電子有限公司

BC850C

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon *MoistureSensitivityLevel:1 *ESDRating-HumanBodyModel:>4000V -MachineModel:>400V

WEITRONWEITRON

威堂電子科技

BC850C

NPNSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgain)

NPNSiliconAFTransistors Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856,BC857,BC859,BC860(PNP)

SIEMENS

Siemens Ltd

BC850C

NPNSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850CMTF

NPNEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC849,BC850 •ComplementtoBC856...BC860

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC850CT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850CW

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC850CW

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

BC850CW

NPNSiliconAFTransistor(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

SIEMENS

Siemens Ltd

BC850CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC850CW

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC850CW

NPNSiliconAFTransistors

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

详细参数

  • 型号:

    AES850-E-CH-CA-BO

  • 制造商:

    Digital Persona

  • 功能描述:

    - Trays

供应商型号品牌批号封装库存备注价格
AUTHENTEC
2021+
LGA
13480
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
N/A
2017+
BGA
23589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
N/A
22+23+
BGA
19556
绝对原装正品全新进口深圳现货
询价
23+
N/A
90450
正品授权货源可靠
询价
QFN23
2048+
BGA
9852
只做原装正品现货!或订货假一赔十!
询价
QFN23
23+
BGA
50000
全新原装正品现货,支持订货
询价
N/A
QFN23
68900
原包原标签100%进口原装常备现货!
询价
QFN23
BGA
75
优势代理渠道,原装正品,可全系列订货开增值税票
询价
QFN23
23+
NA/
75
优势代理渠道,原装正品,可全系列订货开增值税票
询价
QFN23
23+
BGA
75
原装正品,假一罚十!
询价
更多AES850-E-CH-CA-BO供应商 更新时间2024-5-15 15:22:00