Cat 5e UTP Patch Cable

文件：45.81 Kbytes 页数：1 Pages

ASSMANNAssmann Electronics Inc.

阿斯曼电子

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

文件：754.85 Kbytes 页数：9 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

文件：134.93 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 3.5 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo moto

文件：320.23 Kbytes 页数：3 Pages

CHENMKO

力勤