BTA312

3QHi-ComTriac

BTA312B

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT404plasticsingle-endedsurface-mountablepackage Features ■Sensitivegate ■HighimmunitytodV/dt ■Veryhighcommutationperformancemaximizedateachgatesensitivity Applications ■Highpowermotorcontro

BTA312B

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT404plasticsingle-endedsurface-mountablepackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt Applications ■Highpowermotorcontrol-e.g.washingm

BTA312B

12AThree-quadranttriacshighcommutationhightemperature

BTA312X

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT186Afullpackplasticpackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt ■Highisolationvoltage Applications ■Highpowermotorcontrol-e.g.was

BTA312X

12AThree-quadranttriacshighcommutation

Generaldescription Passivated,newgeneration,highcommutationtriacsinaSOT186Afullpackplasticpackage Features ■Veryhighcommutationperformancemaximizedateachgatesensitivity ■HighimmunitytodV/dt ■Highisolationvoltage Applications ■Highpowermotorcontrol-e.g.was

BTA312Y

12AThree-quadranttriacshighcommutationinsulated

Generaldescription Passivated,newgeneration,highcommutationtriacsinaninternallyinsulatedTO-220plasticpackage Features ■Veryhighcommutationperformance ■HighimmunitytodV/dt ■Isolatedmountingbase ■2500VRMSisolationvoltage Applications ■Motorcontrol-e.g.washin

BTM312

BluetoothModule

BUL312FH

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingHighVoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingawideR.B.S.O.A. ■HIGHVOLTAGECAP

BUL312FP

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUL312FPismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhigh switchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructurewithplanaredge terminationtoenhanceswitchingspeedswhilemaintainingawideRBSOA.TheBULseriesisd

BUL312FP

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage :VCEO(SUS)=500V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=0.5V(Max)@IC=1A ·VeryHighSwitchingSpeed APPLICATIONS ·Designedforuseinlightingapplicationsandlowcostswitch-modepowersupplies.

BUP312

IGBT

•Lowforwardvoltagedrop •Highswitchingspeed •Lowtailcurrent •Latch-upfree •Avalancherated

BUZ312

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.0A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive

BUZ312

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

C312

MONOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

C312

MOLOLITHICWIDEBANDCRTDISTORTIONCORRECTIONDEVICE

FEATURES •16or24pinceramicdip •Minimumofexternalcomponentsrequired •Easilyadjustsforyokeerrors •Accuracybetterthan0.5Max(C312) •Bandwidthcompatiblewith10MHzsystems •Bothgeometryandfocusavailable

CAPA312

3.5EmbeddedSBCwithIntel짰Pentium짰ProcessorN4200&Celeron짰Processor3.5EmbeddedSBCwithIntel짰Pentium짰ProcessorN4200&Celeron짰Processor

CH312HA

2.54MM(.100)RIGHTANGLEBOARDMOUNTPNHEADER

CL312

WhitetranslucenthighimpactUVstabilizedacryliclens

CM312

ContactBayonetBaseWireTerminal

S-11DoubleContactBayonetBase T-3/4WireTerminal T-3/4Micro-MidgetFlangeBase