AUIRFI3205

AdvancedPlanarTechnology

Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower

BTS3205G

SmartLow-SidePowerSwitch

BTS3205N

SmartLow-SidePowerSwitch

C3205

2P227/30TCFEPOASFLEXPVDFTYPECMP

C3205

NPNSiliconGeneralPurposeTransistor

FEATURE ●LowcollectortoemittersaturationvoltageVCE(sat). ●Audiopoweramplifier ●HighCurrent

C3205

BIPOLARTRANSISTOR(NPN)

FEATURES ComplementarytoKTA1273 HighCurrentApplication SurfaceMountdevice

CDT3205

???LED雍멨눣?㎩댍IC

CDT3205APP

???LED雍멨눣?㎩댍IC

CEB3205

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 5V,108.5A,RDS(ON)=8.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEB3205

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 55V,108.5A,RDS(ON)=8.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.