TK12D60U

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

TK12D60U

N-Channel650V(D-S)MOSFET

TK12D60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.36Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=7.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TMG12D60

TRIAC(ThroughHole/Non-isolated)

TMG12D60F

TRIAC(ThroughHole/Isolated)

TMG12D60H

TRIAC(SurfaceMountDevice/Non-isolated)