ADPA7009-2中文资料亚德诺数据手册PDF规格书

GENERAL DESCRIPTION

The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic

high-electron-mobility transistor (pHEMT), monolithic microwave integrated

circuit (MMIC), 0.5 W power amplifier with an integrated

temperature-compensated, on-chip power detector that operates

between 20 GHz and 54 GHz. The amplifier provides a gain of 17.5

dB, an output power for 1 dB compression (OP1dB) of 28 dBm, and

a typical output third-order intercept (OIP3) of 34.5 dBm at 20 GHz

to 35 GHz. The ADPA7009-2 requires 850 mA from a 5 V supply

voltage (VDDx). The RF input and outputs are internally matched

and DC-blocked for ease of integration into higher level assemblies.

Most of the typically required external passive components for

operation (AC coupling capacitors and power supply decoupling

capacitors) are integrated, which facilitates a small, compact printed

circuit board (PCB) footprint. The ADPA7009-2 is available in a 5.00

mm × 5.00 mm, 24-terminal chip array, small outline, no lead cavity

[LGA_CAV] package.

FEATURES

► Integrated power-supply capacitors and bias inductors

► Integrated AC coupling capacitors

► Gain: 17.5 dB typical at 20 GHz to 35 GHz

► Input return loss: 14 dB typical at 20 GHz to 35 GHz

► Output return loss: 15 dB typical at 20 GHz to 35 GHz

► OP1dB: 28 dBm typical at 20 GHz to 35 GHz

► PSAT: 28.5 dBm typical at 20 GHz to 35 GHz

► OIP3: 34.5 dBm typical at 20 GHz to 35 GHz

► Noise figure: 7.5 dB typical at 20 GHz to 35 GHz

► 5 V supply voltage at 850 mA

► 50 Ω matched input and output

► 5.00 mm × 5.00 mm, 24-terminal chip array, small outline, no

lead cavity [LGA_CAV] package

APPLICATIONS

► Military and space

► Test instrumentation