0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier

FEATURES ► Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier ► RF input and RF output AC-coupled ► Integrated drain bias inductors ► Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm) ► Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)

文件：963.47 Kbytes 页数：17 Pages

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4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

文件：1.01108 Mbytes 页数：19 Pages

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4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

文件：1.01108 Mbytes 页数：19 Pages

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4.5W (36.5dBm), 8GHz to 12GHz, GaN Power Amplifier

FEATURES ► Internally matched and AC-coupled, 4.5W, GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT: 36.5dBm typical with PIN = 1dBm from 9.5GHz to 11.5GHz ► Small signal gain: 38.5dB typical from 9.5GHz to 11.5GHz ► Power gain: 35.5dB typical with PIN = 1dBm

文件：1.01108 Mbytes 页数：19 Pages

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43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

文件：880.15 Kbytes 页数：17 Pages

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43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

文件：880.15 Kbytes 页数：17 Pages

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43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

文件：880.15 Kbytes 页数：17 Pages

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43 dBm, 20 W, GaN Power Amplifier, 8.2 GHz to 11.8 GHz

FEATURES ► Internally matched and AC-coupled 20 W GaN power amplifier ► Integrated temperature-compensated RF power detector ► POUT with PIN = 22 dBm: 43.5 dBm typical from 9.6 GHz to 11 GHz ► Small signal gain: 31 dB typical from 9.6 GHz to 11 GHz ► Power gain with PIN = 22 dBm: 21.5 dB typ

文件：880.15 Kbytes 页数：17 Pages

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50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si

文件：985.44 Kbytes 页数：18 Pages

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50 GHz to 95 GHz, GaAs, pHEMT, MMIC, Wideband Power Amplifier

FEATURES Gain: 14.5 dB typical at 50 GHz to 70 GHz S11: 22 dB typical at 50 GHz to 70 GHz S22: 19 dB typical at 50 GHz to 70 GHz P1dB: 17 dBm typical at 50 GHz to 70 GHz PSAT: 21 dBm typical OIP3: 25 dBm typical at 70 GHz to 90 GHz Supply voltage: 3.5 V at 350 mA 50 Ω matched input/output Die si

文件：985.44 Kbytes 页数：18 Pages

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