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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
CMCP788A-IP	文件：521.429 Kbytes Page：2 Pages	PremiumTopEntryAccelerometer,Submersible Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralPURCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •SealedtoIP68	STi Subaru Tecnica International	STi
CMCP788T	文件：512.44 Kbytes Page：2 Pages	PremiumDualOutputTopEntryAccelerometerwithTemperatureand3PinMS5015 Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±15and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •3PinMS5015Connector •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Mounting	STi Subaru Tecnica International	STi
CMCP788T-I	文件：505.27 Kbytes Page：2 Pages	PremiumDualOutputTopEntryAccelerometerwithTemperatureandIntegralArmoredBraidedCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun	STi Subaru Tecnica International	STi
CMCP788T-IP	文件：542.09 Kbytes Page：2 Pages	PremiumDualOutputTopEntryAccelerometerwithTemperatureandSubmersiblePURIntegralCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun	STi Subaru Tecnica International	STi
CP788X	文件：705.35 Kbytes Page：2 Pages	SmallSignalTransistorPNP-LowNoiseAmplifierTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å	CentralCentral Semiconductor Corp 美国中央半导体	Central
D788	文件：31.29 Kbytes Page：6 Pages	SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB738and2SB739	HitachiHitachi, Ltd. 日立公司	Hitachi
DRA788	文件：3.91028 Mbytes Page：269 Pages	DRA78xInfotainmentApplicationsProcessor	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
DRA788	文件：3.91118 Mbytes Page：269 Pages	DRA78xInfotainmentApplicationsProcessor	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
DRA788ABF	文件：3.91118 Mbytes Page：269 Pages	DRA78xInfotainmentApplicationsProcessor	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
DRA788ABF	文件：3.91028 Mbytes Page：269 Pages	DRA78xInfotainmentApplicationsProcessor	TI1Texas Instruments(TI) 德州仪器德州仪器 (TI)	TI1
EVAL-ADG788EBZ	文件：340.01 Kbytes Page：8 Pages	EvaluationBoardforADG788TripleSPDTSwitchinChipScalePackage	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
EVAL-ADG788EBZ	文件：175.64 Kbytes Page：11 Pages	2.5ohm,1.8Vto5.5V,2.5V,-2.5VTriple/QuadSPDTSwitchesinChipScalePackages GENERALDESCRIPTION TheADG786andADG788arelowvoltage,CMOSdevicescomprisingthreeindependentlyselectableSPDT(singlepole,doublethrow)switchesandfourindependentlyselectableSPDTswitchesrespectively. Lowpowerconsumptionandoperatingsupplyrangeof1.8Vto5.5Vanddual±2	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
FZT788	文件：81.24 Kbytes Page：2 Pages	PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES Lowequivalenton-resistance;RCE(sat)93mΩat3A Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits	ZetexZetex Semiconductors 捷特科半导体	Zetex
FZT788ATA	文件：87.58 Kbytes Page：2 Pages	SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES Lowequivalenton-resistance;RCE(sat)93mΩat3A Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits	ZetexZetex Semiconductors 捷特科半导体	Zetex
FZT788B	文件：81.24 Kbytes Page：2 Pages	PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES Lowequivalenton-resistance;RCE(sat)93mΩat3A Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits	ZetexZetex Semiconductors 捷特科半导体	Zetex
FZT788B	文件：93.27 Kbytes Page：2 Pages	SOT223PNPSILICONPLANARMEDIUM Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony	DIODESDiodes Incorporated 达尔科技	DIODES
FZT788B	文件：38.13 Kbytes Page：2 Pages	PNPSiliconPlanarMediumPowerHighGainTransistor Features ●Lowequivalenton-resistance;RCE(sat)93mÙat3A. ●Gainof300atIC=2AmpsandVerylowsaturationvoltage.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
FZT788BTA	文件：950.85 Kbytes Page：7 Pages	15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
FZT788BTA	文件：93.27 Kbytes Page：2 Pages	SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony	DIODESDiodes Incorporated 达尔科技	DIODES
FZT788BTC	文件：950.85 Kbytes Page：7 Pages	15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯福林电子科技有限公司	ADG788BCPZZ	ADI/亚德诺	21+	原封装	13880	公司只售原装,支持实单	询价
博速半导体（深圳）有限公司	ADG788BCPZZ	ADI/亚德诺	22+		66900	原封装	询价
深圳市兴灿科技有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	23+	LFCSP-20	25500	授权代理直销,原厂原装现货,假一罚十,特价销售	询价
深圳市科思奇电子科技有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	20+	QFN	5000	原装正品	询价
深圳市威尔健半导体有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	23+	LFCSP20	50000	全新原装正品现货,支持订货	询价
深圳市创盛芯科技有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	22+	QFN20	3000	原装现货假一赔十	询价
深圳廊盛科技有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	2022	LFCSP20	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市大联智电子有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	22+	QFN20	354000		询价
深圳硅原半导体有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺		QFN	6854		询价
深圳市宝隆宏业科技有限公司	ADG788BCPZ其他被动元件	ADI/亚德诺	2122+	NA	60000	全新原装正品现货,假一赔十	询价

更多ADG788BCPZZ供应商更新时间2024-6-18 10:47:00

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