Low Capacitance, Low Charge Injection

文件：276.53 Kbytes 页数：12 Pages

AD

亚德诺

1 pF Off Capacitance, 1 pC Charge Injection, 짹15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 页数：16 Pages

AD

亚德诺

1 pF Off Capacitance, 1 pC Charge Injection, 짹15 V/12 V iCMOS??Quad SPST Switches

GENERAL DESCRIPTION The ADG1211/ADG1212/ADG1213 are monolithic complementary metal-oxide semiconductor (CMOS) devices containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipol

文件：271.49 Kbytes 页数：16 Pages

AD

亚德诺

Low Capacitance, Low Charge Injection, 짹15 V/12 V iCMOS Quad SPST Switches

文件：330.09 Kbytes 页数：16 Pages

AD

亚德诺