首页 >ADCMP610BRJZ-RL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
짹300째/secYawRateGyro | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
짹300째/secYawRateGyro | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
짹300째/secYawRateGyro | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
ADSLTransformersforLucentChipsets | TALEMA Talema Group LLC | TALEMA | ||
PolarPAKSolderJointReliabilityBasedonThermalFatigueIPC-9701 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Usingthe24LC21DualModeSerialEEPROM | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | ||
Si48XXATDDPROGRAMMINGGUIDE | SILABS Silicon Laboratories | SILABS | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
ComplementaryEnhancementModeFieldEffectTransistor GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
PhotoMOSRELAYS PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS |
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