650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

文件：223.22 Kbytes 页数：5 Pages

ANALOGPOWER

Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：291.41 Kbytes 页数：2 Pages

CREE

科锐

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：773.27 Kbytes 页数：6 Pages

CREE

科锐

3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.72679 Mbytes 页数：9 Pages

WOLFSPEED