Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：773.27 Kbytes 页数：6 Pages

Cree

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Z-RecTM Rectifiers and Zero-Recovery짰 Rectifiers

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

文件：291.41 Kbytes 页数：2 Pages

Cree

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3rd Generation 650 V, 10 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.72679 Mbytes 页数：9 Pages

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Silicon Carbide Schottky Diode

文件：953.28 Kbytes 页数：6 Pages

Cree

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碳化硅肖特基二极管

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

650V SiC肖特基二极管

JCWSEMI

嘉灿微

SiC肖特基二极管

ChipNobo

无边界

Package：TO-220-2；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 650V 10A TO220-2

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