CEG8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,6.5A,RDS(ON)=22mW@VGS=4.5V. RDS(ON)=32mW@VGS=2.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TSSOP-8forSurfaceMountPackage. Leadfreeproductisacquired. ESDProtected:HBM2000V

CEM8208

DualN-ChannelMOSFETusesadvancedtrenchtechnology

CEM8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,7A,RDS(ON)=22mΩ@VGS=4.5V. RDS(ON)=32mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired. ■ESDProtected:2000V

CEM8208

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,7A,RDS(ON)=22mW@VGS=4.5V. RDS(ON)=32mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired. ESDProtected:2000V

CHM8208JPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT7Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CUE8208BK

82SeriesMultipurposeABSEnclosure

Productoverview Multi-purposeABScases,designedforabroad rangeofapplications. •Universalplasticenclosurewithscrew fastening •Availablein26sizesintwocolours;whiteand black •Suitableformeasuringinstruments,testing, devices,wirelesscommunicationsdevices, med

CUE8208WH

82SeriesMultipurposeABSEnclosure

Productoverview Multi-purposeABScases,designedforabroad rangeofapplications. •Universalplasticenclosurewithscrew fastening •Availablein26sizesintwocolours;whiteand black •Suitableformeasuringinstruments,testing, devices,wirelesscommunicationsdevices, med

CZ8208

RFAMPLIFIER

CZ8208

RFAMPLIFIER

EP8208-HL

14PinDIP5TapLowProfileTTLCompatibleActiveDelayLines