首页 >ADA4800-KGD-WP>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DualN-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4800usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinbuckconverters. Features VDS(V)=30V ID=6.9A RDS(ON) | ALPHA Alpha Industries | ALPHA | ||
PlasticEncapsulatedDevice | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
DualN-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
DualN-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
DualN-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4800AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinbuckconverters.StandardProductAO4800AisPb-free(meetsROHS&Sony259sp | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
DualN-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4800AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinbuckconverters.StandardProductAO4800AisPb-free(meetsROHS&Sony259sp | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
DualN-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4800B/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinbuckconverters.StandardProductAO4800B/LisPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
DualN-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100UISTested •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SetTopBox •LowCurrentDC/DC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
30VDualN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
DualN-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4800B/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThetwoMOSFETsmakeacompactandefficientswitchandsynchronousrectifiercombinationforuseinbuckconverters.StandardProductAO4800B/LisPb-free(meetsROHS&Sony25 | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
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