18 V, Precision, 725 μA, 4 MHz, CMOS RRIO Operational

FEATURES ► Low power at high voltage (18 V): 725 μA maximum ► Low offset voltage ► 150 μV maximum at VSY/2 ► 300 μV maximum over entire common-mode range ► Low input bias current: 15 pA maximum ► Gain bandwidth product: 4 MHz typical at AV = 100 ► Unity-gain crossover: 4 MHz typical ► −3 d

文件：260.98 Kbytes 页数：11 Pages

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丝印：A33；Package：CHIP；18 V, Precision, 725 μA, 4 MHz, CMOS RRIO Operational

FEATURES ► Low power at high voltage (18 V): 725 μA maximum ► Low offset voltage ► 150 μV maximum at VSY/2 ► 300 μV maximum over entire common-mode range ► Low input bias current: 15 pA maximum ► Gain bandwidth product: 4 MHz typical at AV = 100 ► Unity-gain crossover: 4 MHz typical ► −3 d

文件：260.98 Kbytes 页数：11 Pages

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18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier

文件：904.74 Kbytes 页数：32 Pages

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OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps

FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov

文件：1.0819 Mbytes 页数：33 Pages

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18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier

文件：904.74 Kbytes 页数：32 Pages

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