ADA4661-2-KGD-WP技术资料参数供应代理AD-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ADA4661-2-KGD-WP	文件：260.98 Kbytes Page：11 Pages	丝印：A33；Package：CHIP；18 V, Precision, 725 μA, 4 MHz, CMOS RRIO Operational FEATURES ► Low power at high voltage (18 V): 725 μA maximum ► Low offset voltage ► 150 μV maximum at VSY/2 ► 300 μV maximum over entire common-mode range ► Low input bias current: 15 pA maximum ► Gain bandwidth product: 4 MHz typical at AV = 100 ► Unity-gain crossover: 4 MHz typical ► −3 d 文件：260.98 Kbytes 页数：11 Pages	AD 亚德诺	AD
ADA4661-2	文件：904.74 Kbytes Page：32 Pages	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier 文件：904.74 Kbytes 页数：32 Pages	AD 亚德诺	AD
ADA4661-2	文件：1.0819 Mbytes Page：33 Pages	OVP and EMI Protected, Precision, Low Noise and Bias Current Op Amps FEATURES Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum ov 文件：1.0819 Mbytes 页数：33 Pages	AD 亚德诺	AD
ADA4661-2ACPZ-RL	文件：904.74 Kbytes Page：32 Pages	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier 文件：904.74 Kbytes 页数：32 Pages	AD 亚德诺	AD

更多ADA4661-2-KGD-WP供应商更新时间2025-10-4 10:36:00