航空航天用低失真、完全差分射频/中频放大器

AD8351S是一款全差分放大器，可用于在通信收发器中，以IF频率驱动高分辨率（10-14位）/高速ADC (240 MSPS)。\n\n AD8351S简化了ADC驱动，用户可以通过一个外部电阻调整增益（最高26dB），同时集成了输出共模调整电路，以降低输入ADC中的驱动电平。\n\n AD8351S是一种极低失真增益级，同时具有低噪声和宽增益带宽特性，因而非常适合数字通信IF接收机使用。\n\n 关于驱动12/14位分辨率ADC以及用该器件进行单端至差分信号转换的详细电路信息，参见AD8351S产品数据手册。\n\n AD8351S采用先进的硅双极 • 宽带宽：450 MHz（-3dB带宽，6dB增益)\n\n• 通过一个外部电阻设置增益（0dB至26dB)\n\n• 可调输出共模电压;

ADI

亚德诺

Package：16-WFQFN 裸露焊盘，CSP；包装：托盘 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP 2.2GHZ 16LFCSP

AD

亚德诺

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

DRV8351-SEP: 40V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Radiation Performance – SEL, SEB, and SET resistant up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 43 M

文件：1.29438 Mbytes 页数：27 Pages

TI

德州仪器

DRV8351-SEP: 40V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Radiation Performance – SEL, SEB, and SET resistant up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 43 M

文件：1.29438 Mbytes 页数：27 Pages

TI

德州仪器