首页 >AD8351ARC/QMLR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LowDistortionDifferentialRF/IFAmplifier GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier FEATURES−3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion −79dBcsecondat70MHz −81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation: | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier FEATURES−3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion −79dBcsecondat70MHz −81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation: | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
LowDistortionDifferentialRF/IFAmplifier FEATURES−3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion −79dBcsecondat70MHz −81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation: | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
DRV8351-SEP:40-VThree-PhaseBLDCGateDriver 1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4 | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DRV8351-SEP:40-VThree-PhaseBLDCGateDriver 1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4 | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
