AD8351-EVALZ

Low Distortion Differential RF/IF Amplifier

FEATURES−3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion −79dBcsecondat70MHz −81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

AD8351-EVALZ

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD EVAL FOR AD8351

DRV8351DIMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

DRV8351DMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

DRV8351-SEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

DRV8351-SEPD

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

DRV8351-SEPDI

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features •40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V •TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

ESD8351

ESDProtectionDiodesLowCapacitanceESDProtectionDiodeforHighSpeedDataLine

TheESD8351SeriesESDprotectiondiodesaredesignedtoprotect highspeeddatalinesfromESD.Ultra−lowcapacitanceandlowESD clampingvoltagemakethisdeviceanidealsolutionforprotecting voltagesensitivehighspeeddatalines. Features •LowCapacitance(0.55pFMax,I/OtoGND)

ESD8351

ESD8118MUTAG

ESD8351

ESDProtectionDiodes