Low Distortion Differential RF/IF Amplifier

FEATURES −3 dB bandwidth of 2.2 GHz for AV = 12 dB Single resistor programmable gain: 0 dB ≤ AV ≤ 26 dB Differential interface Low noise input stage 2.7 nV/√Hz at AV = 10 dB Low harmonic distortion −79 dBc second at 70 MHz −81 dBc third at 70 MHz OIP3 of 31 dBm at 70 MHz Single-supply operation:

文件：478.8 Kbytes 页数：19 Pages

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亚德诺

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD EVAL FOR AD8351

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DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器

DRV8351-SEP: 40-V Three-Phase BLDC Gate Driver

1 Features • 40V Three Phase Half-Bridge Gate driver – Drives N-Channel MOSFETs (NMOS) – Gate Driver Supply (GVDD): 5-15V – MOSFET supply (SHx) supports up to 40V • Target Radiation Performance – SEL, SEB, and SET immune up to LET = 43 MeV-cm2 /mg – SET and SEFI characterized up to LET = 4

文件：1.32812 Mbytes 页数：29 Pages

TI

德州仪器