首页 >AD7341BSTZ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
SINGLE12/10/8-BITVOLTAGE-OUTPUTDACS | ICMICIC MICROSYSTEMS 集成电路微系统股份有限公司 | ICMIC | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa | UMWUMW Rightway Semiconductor Co., Ltd. 友台友台半导体 | UMW | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17 | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheseHEXFET®PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa | UMWUMW Rightway Semiconductor Co., Ltd. 友台友台半导体 | UMW | ||
DualN-Channel60V(D-S)175째CMOSFET FEATURES •TrenchFET®powerMOSFET •100RgandUIStested | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AD |
22+ |
QFP |
6980 |
原装现货,可开13%税票 |
询价 | ||
AD |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
AD |
22+ |
DIP28 |
200 |
主打产品,长备大量现货 |
询价 | ||
AnalogDevices |
DIP-24P |
3000 |
AD代理旗下一级分销商,主营AD全系列产品 |
询价 | |||
DIP |
2 |
询价 | |||||
AD |
2021+ |
DIP |
1600 |
自家库存,百分之百原装 |
询价 | ||
AD |
1725+ |
DIP24 |
6528 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
AD |
16+ |
原厂封装 |
10000 |
全新原装正品,代理优势渠道供应,欢迎来电咨询 |
询价 | ||
AD |
23+ |
DIP/24 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
ADI/亚德诺 |
20+ |
DIP |
8596 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 |
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