AD680JR规格书应用电路库存现货亚德诺第3页-114ic电子网

首页 >AD680JR>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BD680	文件：84.55 Kbytes Page：3 Pages	SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli	COMSET Comset Semiconductor	COMSET
BD680	文件：102.21 Kbytes Page：3 Pages	SiliconPNPDarligtonPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications	SAVANTIC Savantic, Inc.	SAVANTIC
BD680	文件：55.2 Kbytes Page：3 Pages	PNPDARLIGNTONPOWERSILICONTRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.	TEL TRANSYS Electronics Limited	TEL
BD680	文件：33.19 Kbytes Page：1 Pages	SiliconPNPTransistors Features •WithTO-126package •InmonolithicDarlingtonconfiguration •Thistransistorisintendedforuseinmediumpowerlinarandswitchingapplications •ComplementtotypeBD679	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
BD680	文件：131.41 Kbytes Page：3 Pages	SiliconPNPDarligtonPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
BD680	文件：252.33 Kbytes Page：6 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BD680	文件：382.94 Kbytes Page：12 Pages	ComplementarypowerDarlingtontransistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BD680	文件：123.32 Kbytes Page：4 Pages	PNPDARLIGNTONPOWERSILICONTRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.	CDIL CDIL	CDIL
BD680	文件：76.26 Kbytes Page：3 Pages	SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli	COMSET Comset Semiconductor	COMSET
BD680	文件：382.93 Kbytes Page：12 Pages	ComplementarypowerDarlingtontransistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BD680	文件：59.19 Kbytes Page：4 Pages	PlasticMedium?뭁owerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BD680	文件：134.84 Kbytes Page：4 Pages	NPNSILICONDARLINGTONTRANSISTORS PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W)	SIEMENS Siemens Ltd	SIEMENS
BD680	文件：135.28 Kbytes Page：4 Pages	PNPSILICONDARLINGTONTRANSISTORS PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W)	SIEMENS Siemens Ltd	SIEMENS
BD680	文件：110.03 Kbytes Page：4 Pages	PlasticMedium-PowerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD	MotorolaMotorola, Inc 摩托罗拉	Motorola
BD680A	文件：110.03 Kbytes Page：4 Pages	PlasticMedium-PowerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD	MotorolaMotorola, Inc 摩托罗拉	Motorola
BD680A	文件：87.96 Kbytes Page：6 Pages	COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
BD680A	文件：42.13 Kbytes Page：4 Pages	MediumPowerLinearandSwitchingApplications MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD675A,BD677A,BD679AandBD681respectively	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
BD680A	文件：59.19 Kbytes Page：4 Pages	PlasticMedium?뭁owerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BD680A	文件：55.2 Kbytes Page：3 Pages	PNPDARLIGNTONPOWERSILICONTRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.	TEL TRANSYS Electronics Limited	TEL
BD680A	文件：382.94 Kbytes Page：12 Pages	ComplementarypowerDarlingtontransistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

<<<1 234 5 6 7 >>>

产品属性

产品编号：
AD680JR
制造商：
Analog Devices Inc.
类别：
集成电路（IC） > 电压基准
包装：
管件
参考类型：
系列
输出类型：
固定
电压 - 输出（最小值/固定）：
2.5V
容差：
±0.4%
温度系数：
25ppm/°C
噪声 - 0.1Hz 至 10Hz：
10µVp-p
电压 - 输入：
4.5V ~ 36V
电流 - 供电：
280µA
工作温度：
0°C ~ 70°C（TA）
安装类型：
表面贴装型
封装/外壳：
8-SOIC（0.154"，3.90mm 宽）
供应商器件封装：
8-SOIC
描述：
IC VREF SERIES 0.4% 8SOIC

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	AD680JR	ADI(亚德诺)	23+	标准封装	7612	我们只是原厂的搬运工	询价
深圳市毅创腾电子科技有限公司	AD680JR	AD		SOP-8	3100	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市昊创电子有限公司	ad680jr	ADI/亚德诺	2021+	sop8	9450	原装现货。	询价
深圳市盈盛科创科技有限公司	AD680JR	ADI/亚德诺	22+	SOP8	6170	全新原装正品现货优势供应	询价
深圳市坤融电子科技有限公司	AD680JR	ADI	2022+	SOP	4000	原装原厂代理可免费送样品	询价
深圳市宏世佳电子科技有限公司	AD680JR	ADI	2023+	SOP	3500	全新原厂原装产品、公司现货销售	询价
绿盛电子(香港)有限公司	AD680JR	ANA	2015+	SOP/DIP	19889	一级代理AD原装现货,特价热卖!	询价
深圳市勤思达科技有限公司	AD680JR	AD	23+	SOP8	2766		询价
深圳市星佑电子有限公司	AD680JR	ADI	01+	SOP-8	23	自己公司全新库存绝对有货	询价
深圳市凯斯宇科技有限公司	AD680JR	AD	2022	SOP/8	2058	原厂原装正品,价格超越代理	询价

更多AD680JR供应商更新时间2024-5-21 18:30:00

产品属性

相关规格书

相关库存