Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively

文件：42.13 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

文件：59.19 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

文件：123.32 Kbytes 页数：4 Pages

CDIL

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

文件：110.03 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

文件：76.26 Kbytes 页数：3 Pages

COMSET

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

文件：131.11 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

文件：102.46 Kbytes 页数：3 Pages

SAVANTIC

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：382.93 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体