首页 >AD3005>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IndustrialSystemsx86 | VIAVIA Technologies, Inc. 威盛电子威盛电子（中国）有限公司 | VIA | ||
AMR3005 产品概述 AMR3005是一款基于AMR效应的角度传感器芯片，可以测量外界磁场的角度。AMR3005内部包含两个独特的推挽式惠斯通电桥， 两个惠斯通电桥的输出电压正比于两倍磁场角度的正弦和余弦，即正比于sin(2θ)和cos(2θ)，θ为磁场的角度。 AMR3005工作于饱和场，具有较强的抗外界磁场干扰的能力；AMR3005中每个惠斯通电桥包含四个高灵敏度AMR传感元件，此 电桥结构能够有效地补偿传感器的温度漂移；此外，AMR3005采用LGA封装，具有封装体积小，装配方便的特点。 产品特性 各向异性磁电阻(AMR)技术 宽工作电压范围 允 | MULTIDIMENSIONMultiDimension Technology Co.,Ltd. 多维科技江苏多维科技有限公司 | MULTIDIMENSION | ||
DesignFundamentalsforPhototransistorCircuits | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
2A420kHzPWMBUCKDC-DCCONVERTER GeneralDescription TheAP3005isa420kHzfixedfrequencyPWMbuck(step-down)DC-DCconverter,capableofdrivinga2Aloadwithhighefficiency,lowrippleandexcellentlineandloadregulation.Thedeviceincludesavoltagereference,anoscillationcircuit,anerroramplifier,aninternalP | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
N-ChannelEnhancementModeMOSFET Features •30V/80A,RDS(ON)=4mΩ(typ.)@VGS=10V RDS(ON)=7mΩ(typ.)@VGS=4.5V •SuperHighDenseAdvancedCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •TO-220,TO-252andTO-263Packages Applications •PowerManagementinDesktopComputerorDC/DC | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/50A, RDS(ON)=4.5mW(typ.)@VGS=10V RDS(ON)=7mW(typ.)@VGS=4.5V •SuperHighDenseCellDesign •AvalancheRated •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinDesktopComputerorDC/DCConverters | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/50A, RDS(ON)=4.5mW(typ.)@VGS=10V RDS(ON)=7mW(typ.)@VGS=4.5V •SuperHighDenseCellDesign •AvalancheRated •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinDesktopComputerorDC/DCConverters | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/50A, RDS(ON)=4.5mW(typ.)@VGS=10V RDS(ON)=7mW(typ.)@VGS=4.5V •SuperHighDenseCellDesign •AvalancheRated •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinDesktopComputerorDC/DCConverters | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/50A, RDS(ON)=4.5mW(typ.)@VGS=10V RDS(ON)=7mW(typ.)@VGS=4.5V •SuperHighDenseCellDesign •AvalancheRated •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinDesktopComputerorDC/DCConverters | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET Features •30V/50A, RDS(ON)=4.5mW(typ.)@VGS=10V RDS(ON)=7mW(typ.)@VGS=4.5V •SuperHighDenseCellDesign •AvalancheRated •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinDesktopComputerorDC/DCConverters | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC |
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