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FRM234

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FRM234D

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234H

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRM234R

7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234D

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234H

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FRS234R

5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs

Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234D

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSL234R

4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234F

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSPYE234R

RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs

IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234

DC/DCConverterApplications

Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching.

SANYOSanyo

三洋三洋电机株式会社

FSS234D

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FSS234R

6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

FT234XD

SinglechipUSBtoasynchronousserialdatatransferinterface

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XDR

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD-R

USBtoBASICUARTIC

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FT234XD-X

TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures

FTDIFuture Technology Devices International Ltd

FTDIFuture Technology Devices International Ltd

FX234

VSBAudioScrambler

CMLMICROCML Microcircuits

CML公司

详细参数

  • 型号:

    AD234JN

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商型号品牌批号封装库存备注价格
ADI/亚德诺
24+
NA
11360
ADI优势主营型号-原装正品
询价
AD
90+
DIP
700
百分百原装正品现货
询价
AD
2022+
DIP
5000
原厂授权代理 价格绝对优势
询价
ADI
2023+
DIP
3500
全新原厂原装产品、公司现货销售
询价
AD
2015+
SOP/DIP
19889
一级代理AD原装现货,特价热卖!
询价
AD
23+
DIP
9827
询价
AD
DIP
200
询价
AnalogDevices
DIP
1800
AD代理旗下一级分销商,主营AD全系列产品
询价
AD
22+
2645
绝对原装自家现货!真实库存!欢迎来电!
询价
AD
22+
原厂封装
6980
原装现货,可开13%税票
询价
更多AD234JN供应商 更新时间2024-5-21 22:49:00