N--Channel Enhancement--Mode Lateral MOSFETs

Features  Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

文件：557.94 Kbytes 页数：16 Pages

恩XP

RF Power LDMOS Transistors

文件：1.43744 Mbytes 页数：27 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

AIZ Series Passive 10-Tap DIP/SMD Delay Modules

文件：76.32 Kbytes 页数：2 Pages

RHOMBUS-IND

MICROPOWER SHUNT VOLTAGE REFERENCE

文件：83.27 Kbytes 页数：4 Pages

ADMOS

MICROPOWER SHUNT VOLTAGE REFERENCE

GENERAL DESCRIPTION The AMS255 is a two-terminal band-gap voltage reference diode featuring low dynamic impedance and good temperature coefficient, operating over a 100µA to 5mA current range. On-chip trimming is used to provide tight voltage tolerance. Since the AMS255 band-gap reference uses on

文件：36.16 Kbytes 页数：4 Pages

ADMOS