丝印：AD10；Package：WQFN(BQA)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

文件：2.89914 Mbytes 页数：44 Pages

TI

德州仪器

丝印：AD10；Package：SSOP(DB)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

文件：2.89914 Mbytes 页数：44 Pages

TI

德州仪器

丝印：AD10；Package：SSOP(DB)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

文件：2.89914 Mbytes 页数：44 Pages

TI

德州仪器

丝印：AD10；Package：TSSOP(PW)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

文件：2.89914 Mbytes 页数：44 Pages

TI

德州仪器

丝印：AD10；Package：TSSOP(PW)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

文件：2.89914 Mbytes 页数：44 Pages

TI

德州仪器

丝印：AD1065C5；Package：PG-TO263-2-1；650V/10A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：933.97 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD1065C5；Package：PG-TO247-3-41；650V/10A Silicon Carbide Schottky Diode in TO247-3 CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：844.27 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD101Q；Package：WQFN(BQB)；SN74ACT2G101-Q1 Automotive Dual Configurable Data Flip-Flops with Clear and TTL-Compatible Inputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Operating voltage range of 4.5V to 5.5V • TTL-compatible S

文件：1.95467 Mbytes 页数：34 Pages

TI

德州仪器

16-Bit General Purpose Microcontrollers with 256-Kbyte Flash and 16-Kbyte RAM in Low Pin Count Packages

Analog Features • Up to 14-Channel, Software Selectable, 10/12-Bit Analog-to-Digital Converter: - 12-bit, 200K samples/second conversion rate (single Sample-and-Hold) - Sleep mode operation - Charge pump for operating at lower AVDD - Band gap reference input feature - Windowed threshold co

文件：3.46848 Mbytes 页数：416 Pages

Microchip

微芯科技

SCRs 1.5 Amp, Planar

DESCRIPTION This data sheet description Microsemis AD Series 1.6A SCRs designed for medium current control and sensing applications. Units are available in a complete range of blocking voltage from 60 to 400 volts. The AD100 series offers a maximum gate trigger current of 2.0 microamps making it

文件：127.6 Kbytes 页数：3 Pages

Microsemi

美高森美