丝印：AD10；Package：TSSOP(PW)；SNx4ACT10 Triple 3-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Max tpd of 9.5ns at 5V • Inputs are TTL-voltage compatible 2 Applications • Alarm/tamper detect circuit • S-R latch 3 Description The SNx4ACT10 devices contain three independent 3-input NAND gates. The devices

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TI

德州仪器

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

文件：67.36 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

文件：67.36 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT NAND GATE

DESCRIPTION The 74ACT10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. The d

文件：67.36 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体