AADD99222255 SSEERRIIEESS

文件：464.37 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AADD99222255 SSEERRIIEESS

文件：464.37 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AADD99222255 SSEERRIIEESS

文件：464.37 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：AD0865C5；Package：PG-TO263-2-1；650V/8A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins) CoolSiC™ Automotive Schottky Diode 650V G5

Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Junction Temperature range from -

文件：927.46 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：AD00；Package：EPAD-SO8；EZBuckTM 6A Synchronous Buck Regulator

General Description The AOZ6606PI works from 4.5V to 18V input voltage range, and provides up to 6A of continuous output current with an output voltage adjustable down to 0.8V. The AOZ6606PI comes in EPAD-SO8 package and is rated over a -40°C to +85°C operating ambient temperature range.

文件：992.42 Kbytes 页数：16 Pages

AOSMD

万国半导体

丝印：AD02；Package：WQFN(BQA)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

丝印：AD02；Package：TSSOP(PW)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

丝印：AD05；Package：WQFN；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

丝印：AD05；Package：WQFN；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：AD05；Package：TSSOP；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器