丝印：AD02；Package：WQFN(BQA)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

丝印：AD02；Package：TSSOP(PW)；QUADRUPLE 2-INPUT POSITIVE-NOR GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：1.64579 Mbytes 页数：24 Pages

TI

德州仪器

丝印：AD05；Package：WQFN；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：1.92937 Mbytes 页数：27 Pages

TI

德州仪器

丝印：AD05；Package：WQFN；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：AD05；Package：TSSOP；CDx4ACT05 Hex Inverters With Open-Drain Outputs

1 Features • Inputs are TTL-voltage compatible • Speed of bipolar F, AS, and S, with significantly reduced power consumption • Fanout to 15 F devices • SCR-latchup-resistant CMOS process and circuit design • Exceeds 2kV ESD protection per MIL-STD-883, method 3015 2 Description The 'ACT

文件：2.03129 Mbytes 页数：30 Pages

TI

德州仪器

丝印：AD02Q；Package：TSSOP(PW)；SN74AC02-Q1 Automotive Quadruple 2-Input NOR Gates

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Wide operating range of 1.5V to 6V • Inputs accept voltage

文件：1.49331 Mbytes 页数：31 Pages

TI

德州仪器

丝印：AD00；Package：WQFN(BQA)；SNx4ACT00 Quadruple 2-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Maximum tpd of 8ns at 5V • Inputs are TTL-voltage compatible 2 Description The ‘ACT00 devices contain four independent 2- input NAND gates. Each gate performs the Boolean function of Y = A•B or Y = A+B in positive

文件：2.89087 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AD00；Package：WQFN(BQA)；SNx4ACT00 Quadruple 2-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Maximum tpd of 8ns at 5V • Inputs are TTL-voltage compatible 2 Description The ‘ACT00 devices contain four independent 2- input NAND gates. Each gate performs the Boolean function of Y = A•B or Y = A+B in positive

文件：2.89087 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AD00；Package：SSOP(DB)；SNx4ACT00 Quadruple 2-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Maximum tpd of 8ns at 5V • Inputs are TTL-voltage compatible 2 Description The ‘ACT00 devices contain four independent 2- input NAND gates. Each gate performs the Boolean function of Y = A•B or Y = A+B in positive

文件：2.89087 Mbytes 页数：37 Pages

TI

德州仪器

丝印：AD00；Package：SSOP(DB)；SNx4ACT00 Quadruple 2-Input Positive-NAND Gates

1 Features • 4.5V to 5.5V VCC operation • Inputs accept voltages to 5.5V • Maximum tpd of 8ns at 5V • Inputs are TTL-voltage compatible 2 Description The ‘ACT00 devices contain four independent 2- input NAND gates. Each gate performs the Boolean function of Y = A•B or Y = A+B in positive

文件：2.89087 Mbytes 页数：37 Pages

TI

德州仪器