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AMN32112

Passiveinfraredhumandetectionsensorwithbuilt-inamp.

FEATURES 1.SensingcircuitsenclosedinaTO5can Thehigh-densityembeddedcircuitdesigneliminatesexternalsensingcircuits.Advantagesincludereduceddevelopmentanddesignschedules. 2.Superlowcurrentconsumption Reductionofcurrentconsumptionallowsbatterylifetobeext

PanasonicPanasonic Semiconductor

松下松下电器

AMN32112

High-sensitivehumandetectionsensorwithbuilt-inamp.

FEATURES 1.SensingcircuitsenclosedinaTO5can Thehigh-densityembeddedcircuitdesigneliminatesexternalsensingcircuits.Advantagesincludereduceddevelopmentanddesignschedules. 2.Superlowcurrentconsumption Reductionofcurrentconsumptionallowsbatterylifetobeext

PanasonicPanasonic Semiconductor

松下松下电器

AMN32112

Passiveinfraredhumandetectionsensorwithbuilt-inamp.

FEATURES 1.Theworld’ssmallestwithabuilt-inamplifier Extremelycompact.Idealforusein miniaturizeddevices. 2.Duallenscolors(whiteandblack)areprovided Withanultrasmalldesignandduallens colors(whiteandblack),itisinconspicuous, allowingtheuserto

PanasonicPanasonic Semiconductor

松下松下电器

AOCA32112E

20VCommon-DrainDualN-ChannelMOSFET

GeneralDescription •TrenchPowerMOSFETtechnology •LowRSS(ON) •WithESDprotectiontoimprovebatteryperformanceandsafety •Commondrainconfigurationfordesignsimplicity •RoHSandHalogen-FreeCompliant' Applications •Batteryprotectionswitch •Mobiledevicebatterychargi

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AP32112

TriCoreIncrementalEncoderInterfaceusingtheGeneralPurposeTimerUnit(GPTU)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

LTWTN-32112

PowerTransducerSeriesLT-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

LTWTN-32112/Q

PowerTransducerSeriesLT-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

LTWTN-32112/T

PowerTransducerSeriesLT-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

LTWTN-32112SLASHQ

PowerTransducerSeriesLT-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

LTWTN-32112SLASHT

PowerTransducerSeriesLT-UNIT

MSYSTEMM-System Co.,Ltd.

爱模爱模系统有限公司

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