丝印：ACT2229；Package：SOIC；DUAL 64 × 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES

Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229 Free-Running Read and Write Clocks Can Be Asynchronous or Coincident on Each FIFO Input-Ready Flags Synchronized to Write Clocks Output-Ready Flags Synchronized to Read Clocks

文件：309.35 Kbytes 页数：16 Pages

TI

德州仪器

丝印：ACT2229；Package：SOIC；DUAL 64 × 1, DUAL 256 × 1 FIRST-IN, FIRST-OUT MEMORIES

Dual Independent FIFOs Organized as: 64 Words by 1 Bit Each – SN74ACT2227 256 Words by 1 Bit Each – SN74ACT2229 Free-Running Read and Write Clocks Can Be Asynchronous or Coincident on Each FIFO Input-Ready Flags Synchronized to Write Clocks Output-Ready Flags Synchronized to Read Clocks

文件：309.35 Kbytes 页数：16 Pages

TI

德州仪器

Purpose of the Application Note is to detail the startup behaviour

文件：168.48 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TRANSISTOR (BLACK AND WHITE TV VIDEO OUTPUT, HIGH VOLTAHE SWITCHING, DRIVER STAGE AUDIO AMPLIFIER APPLICATIONS)

Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: VCEO= 150 V (min) • Low output capacitance: Cob= 5.0 pF (max) • High transition frequency: fT= 120 MHz (typ.)

文件：189.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN SILICON HIGH VOLTAGE TRANSISTOR

文件：200.54 Kbytes 页数：3 Pages

CDIL