丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

丝印：ACT20M；Package：SOIC；DUAL 4-INPUT POSITIVE-NAND GATES

Inputs Are TTL-Voltage Compatible Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption Balanced Propagation Delays ±24-mA Output Drive Current – Fanout to 15 F Devices SCR-Latchup-Resistant CMOS Process and Circuit Design Exceeds 2-kV ESD Protection Per MIL-STD-883,

文件：640.77 Kbytes 页数：17 Pages

TI

德州仪器

圆形连接器

TE

泰科

圆形连接器

TE

泰科

圆形连接器

TE

泰科