AIMB-787

LGA120010thGenerationIntel®Core™i9/i7/i5/i3&Pentium®/Celeron®ATXwithDP/DVI/VGA,DDR4,USB3.2,M.2

Features ƒIntel®10thgenerationCore™i9/i7/i5/i3&Pentium®/Celeron®processorwith Q470Echipset ƒFourDIMMsocketsupto128GBDDR42933 ƒTripledisplayDP/DVI-D/VGAanddualGbELAN ƒM.2,SATARAID0,1,5,10,USB3.2 ƒSupportsIntelvPro,AMT&TPMtechnologies ƒAdvantechiBMC

ASMB-787

LGA1200Intel®Xeon®W&10thGen.Core™ATXServerBoardwith4xDDR4,5xPCIe,2xPCI,6xUSB3.2,5xSATA3,Quad/DualLANs,andIPMI

Features ƒLGA1200Intel®Xeon®W&10thGen.Core™i9/i7/i5/i3processorswith W480Echipset ƒDDR42933/2666/2400MHzECC/Non-ECCUDIMMupto128GB ƒOnePCIex16link(ortwox8link),twoPCIex4,andonePCIex1slots ƒTripledisplays-DVI-D,VGA,andHDMI2.0ports ƒFiveSATA3po

BD787

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementaryPlasticSiliconPowerTransistors Thesedevicesaredesignedforlowerpoweraudioamplifierandlowcurrent,high−speedswitchingapplications. Features •LowCollector−EmitterSustainingVoltage−VCEO(sus)60Vdc(Min) •HighCurrent−Gain−BandwidthProductfT=

BD787

ComplementaryPlasticSiliconPowerTransistors

BD787->NPN BD788->PNP 4AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS15WATTS ...designedforlowerpoweraudioamplifierandlowcurrent,high–speedswitching applications. •LowCollector–EmitterSustainingVoltageVCEO(sus)60Vdc(Min)—BD787,BD78

BD787

iscSiliconNPNPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=40~250(Min)@IC=0.2A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) •ComplementtotypeBD788 APPLICATIONS •Designedforlowpoweraudioamplifierandlowcurrent,high-speedswitchingapplications.

BD787

ComplementaryPlasticSiliconPowerTransistors

BD787

COMPLEMENTARYPLASTICSILICONANNULARPOWERTRANSISTORS

COMPLEMENTARYPLASTICSILICONANNULAR*POWERTRANSISTORS 4AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON45,6OVOLTS15WATTS

BD787G

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors Thesedevicesaredesignedforlowerpoweraudioamplifierandlowcurrent,high−speedswitchingapplications. Features •LowCollector−EmitterSustainingVoltage−VCEO(sus)60Vdc(Min) •HighCurrent−Gain−BandwidthProductfT=

BD787G

ComplementaryPlasticSiliconPowerTransistors

BGE787B

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC