Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

文件：837.78 Kbytes 页数：6 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

文件：837.78 Kbytes 页数：6 Pages

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MOSFET

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