Dual P-Channel Enhancement Mode Field Effect Transistor

Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • VDS(V)=-20V • ID=-5.5A (VGS=-10V) • RDS(ON)

文件：974.26 Kbytes 页数：6 Pages

ACE

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：2.13835 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：2.13835 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET

ACE ele