Dual N-Channel Enhancement Mode Field Effect Transistor

Description The ACE4922B is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices

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ACE

Dual N-Channel MOSFET uses advanced trench technology

文件：2.53215 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel 20-V (D-S) MOSFET

文件：165.74 Kbytes 页数：3 Pages

AnalogPower

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4922 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the

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AOSMD

万国半导体