ACE4441B

P-Channel Enhancement Mode Field Effect Transistor

Description TheACE4441BusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. Features •VDS(V)=-60V •ID=-4A(VGS=-10V) •RDS(ON)

AN4441

StarttimeoftheRHFLVDS32Areceiver

AO4441

-60VP-ChannelMOSFET

GeneralDescription TheAO4441usesadvancedtrenchtechnologytoprovide excellentRDS(ON),andultra-lowlowgatecharge.This deviceissuitableforuseasaloadswitchorinPWM applications. Features ID=-4A(VGS=-10V) VDS(V)=-60V RDS(ON)

AO4441

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

AO4441

60VP-ChannelMOSFET

GeneralDescription TheAO4441usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. ProductSummary VDS-60V ID(atVGS=-10V)

AO4441

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-4A(VGS=-10V) ●RDS(ON)

AO4441

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4441usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),andultra-lowlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.StandardProductAO4441isPb-free(meetsROHS&Sony259specifications).AO4441LisaGreenPr

AO4441

-60VP-ChannelMOSFET

Features VDS(V)=-60V ID=-4A(VGS=-10V) RDS(ON)

AO4441

P-ChannelEnhancementModeMOSFET

Application Load/PowerSwitching InterfacingSwitching LogicLevelShift

AO4441

P-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisP-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=-60V,ID=-3.2A,RDS(ON)