P-Channel Enhancement Mode Field Effect Transistor

Description The ACE4441B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • VDS(V)=-60V • ID=-4A (VGS=-10V) • RDS(ON)

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ACE

P-Channel Enhancement Mode Field Effect Transistor

Description\nThe ACE4441B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. • VDS(V)=-60V\n• ID=-4A (VGS=-10V)\n• RDS(ON);

ACE ele

Start time of the RHFLVDS32A receiver

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STMICROELECTRONICS

意法半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4441 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4441 is Pb-free (meets ROHS & Sony 259 specifications). AO4441L is a Green Pr

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AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-4 A (VGS =-10V) ● RDS(ON)

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KEXIN

科信电子